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Ono, Ayato; Takayanagi, Tomohiro; Fuwa, Yasuhiro; Shinozaki, Shinichi; Ueno, Tomoaki*; Horino, Koki*; Sugita, Moe; Yamamoto, Kazami; Kinsho, Michikazu; Ikoma, Naoya*; et al.
Proceedings of 20th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.871 - 876, 2023/11
In J-PARC, an ignitron is used for the crowbar device of the klystron power supply to excite the RF acceleration voltage in a Linac cavity. Mercury, that is used in the ignitron, would be prohibition of use in the future due to environmental protection. Therefore, we designed a semiconductor crowbar switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3kV, 40kA, and 50us per board. Because a high voltage of 120 kV is applied on each board, we adopted a self-power supply method to supply a electricity for the control system. This method can create the electricity from a high-voltage DCDC converter. We confirmed the operating performance on a 1/2 scale (60 kV, 40 kA) of the voltage in the existing ignitron system (120 kV, 40 kA). We also studied a test circuit in a higher voltage range of more than 90 kV. Our latest result is well promising for an alternative system of ignitron.
Abe, Shinichiro; Hashimoto, Masanori*; Liao, W.*; Kato, Takashi*; Asai, Hiroaki*; Shimbo, Kenichi*; Matsuyama, Hideya*; Sato, Tatsuhiko; Kobayashi, Kazutoshi*; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 70(8, Part 1), p.1652 - 1657, 2023/08
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Single event upsets (SEUs) caused by neutrons is a reliability problem for microelectronic devices in the terrestrial environment. Acceleration tests using white neutron beam provide realistic soft error rates (SERs), but only a few facilities can provide white neutron beam in the world. If single-source irradiation applicable to diverse neutron source can be utilized for the evaluation of the SER in the terrestrial environment, it contributes to solve the shortage of beam time. In this study, we investigated the feasibility of the SER estimation in the terrestrial environment by any one of these measured data with the SEU cross sections obtained by PHITS simulation. It was found that the SERs estimated by our proposed method are within a factor of 2.7 of that estimated by the Weibull function. We also investigated the effect of simplification which reduce the computational cost in simulation to the SER estimation.
/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiOOnishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*
Japanese Journal of Applied Physics, 62(5), p.050903_1 - 050903_4, 2023/05
While the formation of an GaO
interlayer is key to achieving SiO/GaN interfaces with low defect density, it can affect the reliability and stability of metal-oxide-semiconductor (MOS) devices if the annealing conditions are not properly designed. In the present study, we aimed to minimize the growth of the GaO layer on the basis of the sputter deposition of SiO on GaN. Synchrotron radiation X-ray photoelectron spectrometry measurements confirmed the suppressed growth of the GaO layer compared with a SiO/GaN structure formed by plasma-enhanced chemical vapor deposition. Negligible GaO growth was also observed when subsequent oxygen annealing up to 600
C was performed. A MOS device with negligible capacitance-voltage hysteresis, nearly ideal flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600C and 400C, respectively.
Ono, Ayato; Takayanagi, Tomohiro; Fuwa, Yasuhiro; Shinozaki, Shinichi; Ueno, Tomoaki*; Horino, Koki*; Sugita, Moe; Yamamoto, Kazami; Kinsho, Michikazu; Ikoma, Naoya*; et al.
Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.395 - 399, 2023/01
At J-PARC, an ignitron is used for the crowbar device of the klystron power supply for high-frequency acceleration of a linear accelerator. Ignitron uses mercury, which is of limited use worldwide, and is expected to be discontinued in the future. Therefore, we designed a semiconductor crowbar switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3 kV, 40 kA, and 50 
s per board. For the control power supply to each board module assuming a high voltage of 120 kV, we adopted a self-power supply method that creates a control power supply with a high-voltage DCDC converter from the voltage shared and charged by each board module. It was possible to confirm the operating performance on a 1/2 scale (60 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting twenty oval board modules in series. The output test result will be reported.
Takayanagi, Tomohiro; Ono, Ayato; Fuwa, Yasuhiro; Shinozaki, Shinichi; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Yamamoto, Kazami; Oguri, Hidetomo; Kinsho, Michikazu; et al.
Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.242 - 246, 2023/01
At J-PARC, semiconductor short pulse power supplies to replace kicker power supplies and semiconductor long pulse power supplies to replace klystron power supply systems are under construction. We have fabricated a 40kV/2kA/1.2s unit power supply that employs a linear transformer drivers (LTD) system for kickers. Currently, we are working on a high voltage insulating cylinder insulator that suppresses corona discharges using only the insulator structure, without using insulating oil. In addition, the MARX system was adopted for klystron power supply system. A main circuit unit for 8kV/60A/830s rectangular pulse output and an 800V/60A correction circuit unit that improves the flat top droop from 10% to 1% were manufactured. Furthermore, a 2.2kV/2.4kW high voltage SiC inverter charger has been fabricated for this MARX power supply. The presentation will report the evaluation results of each test and prospects for semiconductor pulse power supplies.
Oda, Kodai; Takayanagi, Tomohiro; Ono, Ayato; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Morishita, Takatoshi; Iinuma, Hiromi*; Tokuchi, Akira*; Kamezaki, Hiroaki*; et al.
Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.610 - 614, 2023/01
Kicker system is being used to kick the accelerated 3 GeV beam into the transport lines in RCS of J-PARC. The current kicker power supply applies thyratrons to discharge switches. We are developing a new kicker power supply using next-generation power semiconductors. The timing of the semiconductor switch operation is determined by the input of an external trigger signal. Large timing jitter causes unstable output pulses and beam loss due to beam orbit deviate from reference orbit. Therefore, a low jitter circuit that achieves high repeatability of 2 ns or less will be developed for the new kicker power supply. A prototype trigger generator has been fabricated, and jitter has been evaluated. The results of the evaluation test and the circuit configuration plan for reducing jitter will be reported.
species at SiO/Si interfaces in Si dry oxidation; Comparison between p-Si(001) and n-Si(001) surfacesTsuda, Yasutaka; Yoshigoe, Akitaka; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Yamamoto, Yoshiki*; Yamamoto, Yukio*; Takakuwa, Yuji*
Journal of Chemical Physics, 157(23), p.234705_1 - 234705_21, 2022/12
Times Cited Count：0 Percentile：0.01(Chemistry, Physical)/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000
) substratesMizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08
Times Cited Count：1 Percentile：17.38(Physics, Applied)The interface properties and energy band alignment of SiO/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO/GaN MOS structures on Ga-polar GaN(0001). Although the SiO/GaN(000) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO/GaN(000) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO/GaN(000) was smaller than that for SiO/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000) substrates for MOS device fabrication.
observation of surface reactions under the gas atmosphere; History, applications, issues, and future prospectTakakuwa, Yuji*; Ogawa, Shuichi*; Yoshigoe, Akitaka
Hoshako, 35(3), p.158 - 171, 2022/05
Ambient pressure X-ray photoelectron spectroscopy for in situ observation of surface reactions using high-brightness synchrotron radiation shows a rapid progress in the number of endstations since about 2005 and is applied to various practical research field for clarifying reactions at solid/gas interfaces of e.g. catalyst, solid/liquid interfaces of e.g. fuel cell, and gas/liquid interfaces of e.g. ion liquid. In this review, a history of the development of APXPS, real-time observation of the surface reactions for Si chemical vapor deposition and Si dry oxidation, issues of APXPS, and future prospects are described.
Nakamura, Jumpei*; Kawakita, Yukinobu; Shimomura, Koichiro*; Suemasu, Takashi*
Journal of Applied Physics, 130(19), p.195701_1 - 195701_7, 2021/11
Times Cited Count：1 Percentile：7.86(Physics, Applied)Ono, Ayato; Takayanagi, Tomohiro; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 18th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.831 - 834, 2021/10
The Ignitron is used in the clover device of the klystron power supply for RF acceleration in the J-PARC LINAC. However, this ignitron uses mercury, the use of which is restricted worldwide, and its production is expected to be discontinued in the future. Therefore, we designed a semiconductor clover switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3 kV, 40 kA, and 50 s per board. For the control power supply to each board module assuming a high voltage of 120 kV, we adopted a self-power supply method that creates a control power supply with a high-voltage DCDC converter from the voltage shared and charged by each board module. It was possible to confirm the operating performance on a 1/4 scale (30 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting ten oval board modules in series. The output test result will be reported.
Takayanagi, Tomohiro; Ono, Ayato; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Togashi, Tomohito; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 18th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.53 - 57, 2021/10
We are developing the LTD semiconductor switch power supply, which combines SiC-MOSFET semiconductors and Linear Transformer Drivers (LTD) circuit to replace the kicker power supply in J-PARC. This power supply consists of two types of circuit boards: a main circuit board for forming rectangular pulses and a correction circuit board for compensating for flat-top droop, which enables high-voltage output and droop compensation for the number of stages connected in a hierarchical series. In addition to the main circuits of the thyratron, PFN, and end-clipper, which are the main circuit board is a single 400 mm 
430 mm board with a reflected wave absorption circuit that can reduce the beam impedance from the kicker magnet. In this study, we used 32 main circuit boards with 1.7 kV SiC-MOSFETs and 20 compensation boards with 100V MOSFETs to achieve the required 40 kV output rating as a kicker power supply. The evaluation results will be reported.
Takayanagi, Tomohiro; Ono, Ayato; Ueno, Tomoaki*; Horino, Koki*; Togashi, Tomohito; Yamamoto, Kazami; Kinsho, Michikazu; Koizumi, Isao*; Kawamata, Shunsuke*
JPS Conference Proceedings (Internet), 33, p.011020_1 - 011020_6, 2021/03
We are developing a new kicker power supply for J-PARC 3-GeV RCS (Rapid-Cycling Synchrotron) using the next generation power semiconductor SiC-MOSFET with high withstand voltage, low loss, and superior high frequency characteristics. The three major circuits adopted for the RCS kicker power supply, the thyratron switch, the PFN circuit of coaxial cable type, and the end clipper for reflection wave absorption, has been realized with a single modular circuit board based on the LTD circuit. The new kicker power supply realizes stable operation, miniaturization and energy saving by using power semiconductors. The required high voltage can be output by stacking the 800V/2kA modular circuit board in series. The details of circuit design and the results of achieving an output of half 20kV/2kA against the target specification of 40kV/2kA are presented here.
Takayanagi, Tomohiro; Ono, Ayato; Horino, Koki*; Ueno, Tomoaki*; Togashi, Tomohito; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 17th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.25 - 28, 2020/09
We have been developing a semiconductor switch power supply to replace the RCS kicker power supply in J-PARC. A SiC MOSFET is used as a power semiconductor element, and a radially symmetric LTD circuit is used for the circuit board. The power supply consists of a combination of two types of circuit boards: a main circuit board, which includes the circuits of the thyratron, PFN and end clipper provided in RCS kicker power supplies, on a single module board, and a correction board, which compensates for flat-top droop. A single main circuit board can provide 800V/2kA output, and 52 main circuit boards and 20 correction boards have been used to successfully achieve the high voltage of 40kV and flat-top flatness of less than 
0.2%. Furthermore, a preliminary test of the dual-parallel circuit was conducted for a twin kicker power supply configuration, which is required for the RCS kicker power supply. The evaluation results and prospects are presented.
Ono, Ayato; Takayanagi, Tomohiro; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 17th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.590 - 593, 2020/09
At J-PARC, an ignitron is used for the clover device of the klystron power supply for high-frequency acceleration of a linear accelerator. Ignitron uses mercury, which is of limited use worldwide, and is expected to be discontinued in the future. Therefore, a semiconductor switch for ignitron substitution using a MOS gate thyristor is designed. In order to be used as a crowbar device, a switch capable of resisting an operating output of 120 kV, 40 kA, 50 us is required. We have realized an oval type substrate module that achieves an operating output of 3 kV, 40 kA, 50 us per substrate. It was possible to confirm the operating performance on a 1/10 scale (12 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting four oval board modules in series. The output test result will be reported.
Takayanagi, Tomohiro; Ueno, Tomoaki; Horino, Koki
Journal of Physics; Conference Series, 1350(1), p.012183_1 - 012183_7, 2019/12
Times Cited Count：0 Percentile：0.06(Physics, Particles & Fields)As one of the advanced research and development for maintaining the stable operation of J-PARC RCS, we are developing semiconductor switch circuit for thyratron substitute adopted in kicker system. Radiation symmetric type circuits using semiconductors of SIC-MOSFETs are composed of circuits in which many semiconductor switches are multiplexed in parallel. Since the lengths of all parallel circuits are equal, the output waveform will not be distorted due to timing jitter or impedance. This circuit is useful for outputting the waveform of ultrafast short pulse. Therefore, we have developed a circuit that achieves further low inductance by making the power transmission circuit into a double circular ring structure equal to the coaxial shape. Compare the inductance value obtained from the structure and the output waveform. In addition, we compare the calculation and the measurement in the test and present the verification result of the developed circular ring structure.
Yoshigoe, Akitaka
Hoshako, 32(4), p.185 - 198, 2019/07
Synchrotron radiation photoelectron spectroscopy is a beneficial technique for precise analysis of chemical states of solid surfaces. Owing to its high luminosity, it ensures availability of termed synchrotron radiation real-time photoelectron spectroscopy which enables "" observation of chemical reactions with gas molecules occurring at surfaces. In this review, oxygen adsorption reactions in the oxidation of silicon single crystal surfaces are focused. Through the demonstration of our research, the usefulness of synchrotron radiation real-time photoelectron spectroscopy to study molecular adsorption reactions at solid surfaces is briefly described and the future perspective would also be shown.
Takayanagi, Tomohiro; Ono, Ayato; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 16th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.75 - 79, 2019/07
We will replace the Thyratron and Ignitron discharge type switch with a semiconductor switch capable of more stable operation. The thyratron alternative switch used by the kicker power supply manufactured the radial symmetric module substrate of the 800V/2kA output which was built by LTD circuit using SiC-MOSFET. By making the power transfer structure between module substrates stacked for high voltage output into a coaxial ring type, a further reduction in inductance is realized. We report the results of evaluating a pulse output of 20kV/1kA (final specification is 40kV/2kA). Ignitron, which is used as a high-power klystron clover switch, has the potential to be discontinued in the future because it uses mercury, which has limited use worldwide. LINAC's klystron clover switches require a working output of 50kV at 120kV/40kA. We fabricated 3kV/40kA oval type module substrate using MOS gate thyristor. Report on preliminary test results.
Ono, Ayato; Takayanagi, Tomohiro; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 16th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.399 - 403, 2019/07
J-PARC uses an ignitron switch as the klystron power source clover device and a thyratron switch as the kicker power system. Ignitron uses mercury, which is of limited use worldwide, and is expected to be discontinued in the future. Therefore, a semiconductor switch for ignitron substitution using a MOS gate thyristor is designed. In order to be used as a crowbar device, a switch capable of resisting an operating output of 120 kV, 40 kA, 50 us is required. We have realized an oval type substrate module that achieves an operating output of 3 kV, 40 kA, 50 us per substrate. In addition, we adopted a LTD circuit using SiC-MOSFET as an alternative switch for thyratron, and produced a radially symmetric pulse power supply circuit to which this circuit was applied. This circuit board achieves a rise of 250 ns or less, and a flat top of 1.5 us or more necessary for the RCS kicker power supply system, with a pulse output of 800 V and 2 kA per circuit board. We report on the power test results at 20 kV.
Takayanagi, Tomohiro; Ueno, Tomoaki*; Horino, Koki*
Journal of Physics; Conference Series, 1067, p.082019_1 - 082019_6, 2018/10
Times Cited Count：1 Percentile：47.2(Physics, Particles & Fields)